Analytical modeling of threshold voltage for cylindrical gate all around (CGAA) MOSFET using center potential

(in lingua inglese)

An analytical center potential model for the CGAA MOSFET is derived using a parabolic approximation of the channel profile. The paper proposes that the threshold voltage calculation using center potential is more accurate than to the previous work wherein the threshold voltage is based on surface potential. An extensive analysis is carried out to find the impact of numerous device parameters on the center potential as well as on the threshold voltage of the CGAA MOSFET.